US Patent Issued to KYOTO UNIVERSITY, NICHIA on March 11 for "Method of forming p-type nitride semiconductor layer" (Japanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,628, issued on March 11, was assigned to KYOTO UNIVERSITY (Kyoto, Japan) and NICHIA Corp. (Anan, Japan).

"Method of forming p-type nitride semiconductor layer" was invented by Katsuhiro Kishimoto (Kyoto, Japan), Mitsuru Funato (Kyoto, Japan), Yoichi Kawakami (Kyoto, Japan) and Kunimichi Omae (Anan, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes a p-type nitride semiconductor layer, the p-type nitride semiconductor layer including an Al-containing nitride semiconductor layer and an Al-containing compound layer containing Al and C as main constituent elements and provided on the surface of the Al-containing nitri...