US Patent Issued to KYOCERA on Nov. 4 for "Semiconductor device and production method for semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,463,098, issued on Nov. 4, was assigned to KYOCERA Corp. (Kyoto, Japan).

"Semiconductor device and production method for semiconductor device" was invented by Shingo Kabutoya (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The following are performed in this method for producing a semiconductor device: a step for forming multiple surface electrode metals joined to a surface of a semiconductor layer on a wafer on which multiple semiconductor devices are attached; a step for excavating a semiconductor layer outside an outer edge of the surface electrode metal to form an outermost edge trench of the semiconductor device; a dicing step for cut...