US Patent Issued to KYOCERA on Aug. 5 for "Semiconductor device and method for manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,382,646, issued on Aug. 5, was assigned to KYOCERA Corp. (Kyoto, Japan).

"Semiconductor device and method for manufacturing semiconductor device" was invented by Shingo Kabutoya (Kyoto, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A semiconductor device includes: a semiconductor layer including a trench; an insulating film covering an inner surface of the trench; a conductor embedded in the trench covered with the insulating film; and a Schottky junction layer. A Schottky junction is formed by the Schottky junction layer and a region being part of a semiconductor layer surface and being adjacent to the trench. A surface of the conductor is locate...