US Patent Issued to KYOCERA on Aug. 12 for "Semiconductor device and method of manufacturing semiconductor device" (Japanese Inventor)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,389,614, issued on Aug. 12, was assigned to KYOCERA Corp. (Kyoto, Japan).

"Semiconductor device and method of manufacturing semiconductor device" was invented by Shingo Kabutoya (Tsukuba, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An insulating film is formed on a front surface of a semiconductor layer in which a trench has been formed. An electric conductor is embedded into the trench, and the insulating film that has been formed on the semiconductor layer surface and that is adjacent to the trench is removed by etching so as to expose the semiconductor layer surface. The semiconductor layer surface is further etched such that the semiconduct...