US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on Sept. 23 for "SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof" (Japanese Inventor)

ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,421,624, issued on Sept. 23, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"SiC substrate, SiC epitaxial substrate, SiC ingot and production methods thereof" was invented by Tadaaki Kaneko (Hyogo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention addresses the problem of providing a novel technology which enables the achievement of a high-quality SiC substrate, a high-quality SiC epitaxial substrate, and a high-quality SiC ingot. The present invention is a method for producing an SiC substrate 11, said method comprising a heat treatment step S1 for heat treating an...