US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on Oct. 21 for "Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,348, issued on Oct. 21, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"Method and device for manufacturing sic substrate, and method for reducing macro-step bunching of sic substrate" was invented by Tadaaki Kaneko (Hyogo, Japan), Natsuki Yoshida (Hyogo, Japan) and Kazufumi Aoki (Hyogo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A device for manufacturing a SiC substrate, in which formation of macro-step bunching is suppressed, comprises: a main body container that is capable of accommodating a SiC substrate and generates, by heating, a vapor pressure of gaseous species contai...