ALEXANDRIA, Va., Nov. 6 -- United States Patent no. 12,460,315, issued on Nov. 4, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).
"Method for manufacturing semiconductor substrates and method for suppressing introduction of displacement to growth layer" was invented by Tadaaki Kaneko (Sanda, Japan) and Daichi Dojima (Sanda, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The problem to be solved by the present invention is to provide novel technology capable of suppressing the introduction of displacement to a growth layer. The present invention, which solves the abovementioned problem, pertains to a method for manufacturing a semiconductor su...