US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on March 18 for "Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing" (Japanese Inventors)

ALEXANDRIA, Va., March 19 -- United States Patent no. 12,255,073, issued on March 18, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Silicon carbide substrate manufacturing method, silicon carbide substrate, and method of removing strain layer introduced into silicon carbide substrate by laser processing" was invented by Tadaaki Kaneko (Sanda, Japan) and Daichi Dojima (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The problem to addressed by the present invention is that of providing a novel technique that can remove a strained layer introduced into a silicon carbide substrate by laser processing. The present silicon carbide substra...