US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on June 10 for "Manufacturing device for SiC semiconductor substrate" (Japanese Inventors)

ALEXANDRIA, Va., June 18 -- United States Patent no. 12,325,930, issued on June 10, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"Manufacturing device for SiC semiconductor substrate" was invented by Tadaaki Kaneko (Sanda, Japan), Yasunori Kutsuma (Sanda, Japan), Koji Ashida (Sanda, Japan) and Ryo Hashimoto (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A manufacturing device of SiC semiconductor substrates includes a SiC container (3) in which Si vapor and C vapor are generated in the internal space during the heat treatment, and a high-temperature vacuum furnace (11) capable of heating the SiC container in Si atmosphere. The dev...