US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on July 15 for "Method for manufacturing SiC substrate" (Japanese Inventor)

ALEXANDRIA, Va., July 16 -- United States Patent no. 12,362,175, issued on July 15, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"Method for manufacturing SiC substrate" was invented by Tadaaki Kaneko (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention addresses the problem of providing novel techniques for manufacturing a SiC substrate that enables reduced material loss when a strained layer is removed. The present invention is a method for manufacturing a SiC substrate 30 which includes a strained layer thinning step S1 for thinning a strained layer 12 of a SiC substrate body 10 by moving the strained layer 12 t...