US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on Jan. 27 for "SiC epitaxial substrate manufacturing method and manufacturing device therefor" (Japanese Inventor)

ALEXANDRIA, Va., Jan. 28 -- United States Patent no. 12,534,825, issued on Jan. 27, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Nagoya, Japan).

"SiC epitaxial substrate manufacturing method and manufacturing device therefor" was invented by Tadaaki Kaneko (Hyogo, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "The present invention addresses the problem of providing a novel SiC epitaxial substrate manufacturing method and manufacturing device therefor. An SiC substrate and an SiC material, which has a lower doping concentration than said SiC substrate, are heated facing one another, and material is transported from the SiC material to the SiC substrate t...