US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on Feb. 3 for "Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer" (Japanese Inventors)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,416, issued on Feb. 3, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Method for manufacturing a semiconductor substrate and method for suppressing occurrence of cracks in a growth layer" was invented by Tadaaki Kaneko (Sanda, Japan) and Daichi Dojima (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a novel technique capable of suppressing the occurrence of cracks in the growth layer.The present invention is a method for manufacturing a semiconductor substrate, which includes: an embrittlement processing step S10 of reducing str...