US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYOTA TSUSHO on Aug. 12 for "Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes" (Japanese Inventors)

ALEXANDRIA, Va., Aug. 12 -- United States Patent no. 12,385,158, issued on Aug. 12, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Method for manufacturing a semiconductor substrate by forming a growth layer on an underlying substrate having through holes" was invented by Tadaaki Kaneko (Sanda, Japan) and Daichi Dojima (Sanda, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter semiconductor substrate. The present invention is a method for manufacturing a semiconductor substrate including a crystal growth step S30 of forming a growth laye...