ALEXANDRIA, Va., June 18 -- United States Patent no. 12,325,936, issued on June 10, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).
"Aluminum nitride substrate manufacturing method, aluminum nitride substrate, and method of removing strain layer introduced into aluminum nitride substrate by laser processing" was invented by Tadaaki Kaneko (Sanda, Japan), Daichi Dojima (Sanda, Japan), Moeko Matsubara (Osaka, Japan) and Yoshitaka Nishio (Osaka, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "The problem to be solved by the present invention is to provide a novel technique that can remove a strained layer intro...