US Patent Issued to KWANSEI GAKUIN EDUCATIONAL FOUNDATION, TOYO ALUMINIUM, TOYOTA TSUSHO on Dec. 30 for "Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,509,795, issued on Dec. 30, was assigned to KWANSEI GAKUIN EDUCATIONAL FOUNDATION (Hyogo, Japan), TOYO ALUMINIUM K.K. (Osaka, Japan) and TOYOTA TSUSHO Corp. (Aichi, Japan).

"Method for manufacturing aluminum nitride substrate, aluminum nitride substrate, and method for forming aluminum nitride layer" was invented by Tadaaki Kaneko (Sanda, Japan), Daichi Dojima (Sanda, Japan), Moeko Matsubara (Osaka, Japan) and Yoshitaka Nishio (Osaka, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "An object of the present invention is to provide a novel technique capable of manufacturing a large-diameter AlN substrate.The present invention is a method for manufact...