US Patent Issued to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION on Sept. 30 for "Multi-channel transistor and manufacturing method by the same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,432,982, issued on Sept. 30, was assigned to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION (Seoul, South Korea).

"Multi-channel transistor and manufacturing method by the same" was invented by Tae Yeon Seong (Seoul, South Korea) and Kwang Ro Yun (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a multilayer-channel thin-film transistor and a method of fabricating the same. More particularly, a multilayer-channel thin-film transistor, including: a first channel layer formed on a substrate; a first source electrode and first drain electrode formed on the first channel layer; a first gate insulating film formed on the fi...