ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,380,919, issued on Aug. 5, was assigned to Korea University Research and Business Foundation (Seoul, South Korea).
"Tunneling device having intermediate layer using natural oxide film and method of manufacturing tunneling device" was invented by Hyun Yong Yu (Seoul, South Korea) and Kyu Hyun Han (Seoul, South Korea).
According to the abstract* released by the U.S. Patent & Trademark Office: "A tunneling device includes a first semiconductor portion disposed on a first oxide substrate, a second semiconductor portion disposed on the first semiconductor portion, and an intermediate layer disposed between the first semiconductor portion and second semiconductor portion. The intermediate l...