US Patent Issued to Korea University Research and Business Foundation on Aug. 19 for "Nonvolatile resistive memory device using dynamic reference in dual domain and read method thereof" (South Korean Inventors)

ALEXANDRIA, Va., Aug. 20 -- United States Patent no. 12,393,349, issued on Aug. 19, was assigned to Korea University Research and Business Foundation (Seoul, South Korea).

"Nonvolatile resistive memory device using dynamic reference in dual domain and read method thereof" was invented by Jongsun Park (Seoul, South Korea) and Joo Yoon Kim (Gwangmyeong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed is a method of reading a nonvolatile resistive memory device including a data cell and a reference cell. The method includes precharging a first bit line connected to the data cell and a second bit line connected to the reference cell, discharging a voltage precharged to the first bit line ...