US Patent Issued to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS on Dec. 30 for "Vertical-structure field-effect transistor and manufacturing method therefor" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,513,942, issued on Dec. 30, was assigned to KOREA UNIVERSITY RESEARCH AND BUSINESS FOUNDATION, SEJONG CAMPUS (Sejong-si, South Korea).

"Vertical-structure field-effect transistor and manufacturing method therefor" was invented by Mon Pyo Hong (Seongnam-si, South Korea) and Min Ki Ryu (Sejong-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A vertical-structure field-effect transistor comprises: a gate electrode, which is formed on a substrate and has a horizontal plane extending in the planar direction and a vertical plane extending in the height direction; a gate insulating layer for covering the gate electrode; a vertical channel which i...