US Patent Issued to KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY on Jan. 28 for "Semiconductor device having trench structure in which propagation of threading dislocations to upper layer of three-dimensional stacked structure is suppressed" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,211,899, issued on Jan. 28, was assigned to KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY (Seoul, South Korea).

"Semiconductor device having trench structure in which propagation of threading dislocations to upper layer of three-dimensional stacked structure is suppressed" was invented by Hyung-jun Kim (Seoul, South Korea) and Seung Hwan Kim (Seoul, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Embodiments relate to a semiconductor device, which includes: a substrate made of a first material; an insulating layer formed on an upper surface of the substrate; a trench formed at the insulating layer to penetrate the insulating layer toward the subs...