US Patent Issued to KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY, ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE on Nov. 25 for "Alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in HVPE growth manner and method for manufacturing the same" (South Korean Inventors)

ALEXANDRIA, Va., Nov. 25 -- United States Patent no. 12,480,222, issued on Nov. 25, was assigned to KOREA INSTITUTE OF CERAMIC ENGINEERING AND TECHNOLOGY (Jinju-si, South Korea) and ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE (Daejeon, South Korea).

"Alpha gallium oxide thin-film structure having high conductivity obtained using selective area growth in HVPE growth manner and method for manufacturing the same" was invented by Dae-Woo Jeon (Jinju-si, South Korea), Ji-Hyeon Park (Gunsan-si, South Korea) and Jae-Kyoung Mun (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are an alpha gallium oxide thin-film structure having high conductivity obtained using selective area ...