US Patent Issued to Korea Electronics Technology Institute on April 29 for "Low-temperature direct growth method of multilayer graphene, pellicle for extreme ultraviolet lithography using the same, and method for manufacturing the pellicle" (South Korean Inventors)

ALEXANDRIA, Va., June 9 -- United States Patent no. 12,287,568, issued on April 29, was assigned to Korea Electronics Technology Institute (Seongnam-si, South Korea).

"Low-temperature direct growth method of multilayer graphene, pellicle for extreme ultraviolet lithography using the same, and method for manufacturing the pellicle" was invented by Hyeong Keun Kim (Yongin-si, South Korea), Seul Gi Kim (Yongin-si, South Korea), Hyun Mi Kim (Seoul, South Korea), Jin Woo Cho (Seoul, South Korea) and Hye Young Kim (Bucheon-si, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "This application relates to a pellicle for extreme ultraviolet lithography and a manufacturing method thereof using the low-tempera...