US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on Sept. 9 for "Fabrication method of conductive nanonetworks through adaptation of sacrificial layer" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 10 -- United States Patent no. 12,412,678, issued on Sept. 9, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (South, South Korea).

"Fabrication method of conductive nanonetworks through adaptation of sacrificial layer" was invented by Jung-Yong Lee (Daejeon, South Korea) and Kyungmin Kim (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a fabrication method of conductive nanonetworks through adaptation of a sacrificial layer includes: forming nanowire networks on a substrate; forming the sacrificial layer on a front surface of the substrate including the nanowire networks; removing the nanowire networks to expose a surface of the...