US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on Sept. 16 for "Silicon photodetector using randomly arranged metal nanoparticles and method for manufacturing same" (South Korean Inventors)

ALEXANDRIA, Va., Sept. 17 -- United States Patent no. 12,419,133, issued on Sept. 16, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea).

"Silicon photodetector using randomly arranged metal nanoparticles and method for manufacturing same" was invented by Jongcheol Park (Daejeon, South Korea), Gapseop Sim (Seoul, South Korea), Tae Hyun Kim (Daejeon, South Korea), Jong-Kwon Lee (Cheongju-si, South Korea) and Il-Suk Kang (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "A silicon photodiode according to an embodiment of the present invention comprises: a silicon substrate having a first conductive area and a second conductive area horizontally spaced ap...