US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on Jan. 28 for "Hybrid memory system and accelerator including the same" (South Korean Inventors)

ALEXANDRIA, Va., Jan. 29 -- United States Patent no. 12,210,744, issued on Jan. 28, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea).

"Hybrid memory system and accelerator including the same" was invented by Myoungsoo Jung (Daejeon, South Korea), Jie Zhang (Daejeon, South Korea) and Hanyeoreum Bae (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "An accelerator includes a processor and a hybrid memory system. The hybrid memory system includes a resistance-based non-volatile memory, a DRAM used as a cache of the resistance-based non-volatile memory, a non-volatile memory controller connected to the resistance-based non-volatile memory and configured ...