US Patent Issued to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY on Dec. 30 for "Dielectric material, device including the same, and method of preparing the dielectric material" (South Korean Inventors)

ALEXANDRIA, Va., Dec. 31 -- United States Patent no. 12,512,265, issued on Dec. 30, was assigned to KOREA ADVANCED INSTITUTE OF SCIENCE AND TECHNOLOGY (Daejeon, South Korea).

"Dielectric material, device including the same, and method of preparing the dielectric material" was invented by Sung-Yoon Chung (Daejeon, South Korea) and Ji-Sang An (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Provided are a dielectric material, a device including the same, and a method of preparing the dielectric material. The dielectric material includes a polycrystalline oxide including a plurality of crystal grain bulks and grain boundaries located between the plurality of crystal grain bulks, and the poly...