US Patent Issued to Korea Advanced Institute of Science and Technology on April 15 for "Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same" (South Korean Inventors)

ALEXANDRIA, Va., June 5 -- United States Patent no. 12,279,436, issued on April 15, was assigned to Korea Advanced Institute of Science and Technology (Daejeon, South Korea).

"Non-volatile memory including negative capacitance blocking oxide layer, operating method of the same and manufacturing method of the same" was invented by Sanghun Jeon (Daejeon, South Korea) and Taeho Kim (Daejeon, South Korea).

According to the abstract* released by the U.S. Patent & Trademark Office: "Disclosed are a non-volatile memory including a negative capacitance blocking oxide layer, an operating method of the same, and a manufacturing method of the same. The non-volatile memory may include a tunneling oxide layer formed on a channel; a charge storage laye...