US Patent Issued to Kokusai Electric on Sept. 30 for "Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Sept. 30 -- United States Patent no. 12,431,336, issued on Sept. 30, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" was invented by Masaru Kadoshima (Toyama, Japan) and Atsushi Sano (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: a) supplying a first gas to the substrate on which a film is formed and forming a modified layer on a surface of the film; b) after a), supplying a second gas to the modified layer and removing the modified layer; c) after b), supplying an inert gas having a first temperature ...