ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,437, issued on Sept. 23, was assigned to Kokusai Electric Corp. (Tokyo).

"Processing method, method of manufacturing semiconductor device, processing apparatus, and recording medium" was invented by Tomiyuki Shimizu (Toyama, Japan), Masaya Nagato (Toyama, Japan), Takashi Ozaki (Toyama, Japan), Yoshitomo Hashimoto (Toyama, Japan) and Katsuyoshi Harada (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is included forming an oxide film on a substrate by alternately performing: forming the first oxide film containing an atom X by performing a first cycle including non-simultaneously performing forming a first layer including a compone...