ALEXANDRIA, Va., Sept. 23 -- United States Patent no. 12,424,463, issued on Sept. 23, was assigned to Kokusai Electric Corp. (Tokyo).
"Method of processing substrate, method of manufacturing semiconductor device, substrate processing system, and recording medium" was invented by Kimihiko Nakatani (Toyama, Japan), Takayuki Waseda (Toyama, Japan), Shoma Miyata (Toyama, Japan) and Yoshitomo Hashimoto (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes (a) forming a film on a substrate by exposing the substrate to a film-forming agent under a first temperature; (b) heat-treating the film under a second temperature higher than the first temperature; (c) alteri...