US Patent Issued to Kokusai Electric on Oct. 7 for "Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 8 -- United States Patent no. 12,435,439, issued on Oct. 7, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing method, method of manufacturing semiconductor device, non-transitory computer-readable recording medium and substrate processing apparatus" was invented by Takahiro Miyakura (Toyama, Japan), Atsushi Moriya (Toyama, Japan), Yasuhiro Megawa (Toyama, Japan), Yasunobu Koshi (Toyama, Japan) and Akito Hirano (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: (a) forming a first film containing a Group 14 element on a substrate at a film-forming temperature; (b) performing a crystal growth of the first film by ...