ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,456,636, issued on Oct. 28, was assigned to Kokusai Electric Corp. (Tokyo).

"Heat insulation structure, substrate processing apparatus, method of manufacturing semiconductor device and substrate processing method" was invented by Hironori Shimada (Toyama, Japan) and Tomoshi Taniyama (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique capable of shortening a temperature stabilization time in a process chamber by improving a heat insulation performance of a lower portion of the process chamber. A heat insulation structure is arranged in a vicinity of a furnace opening of a heat treatment furnace wherein a temperatur...