ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,375, issued on Oct. 21, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing apparatus, method of manufacturing semiconductor device and method of processing substrate support" was invented by Keita Ichimura (Toyama, Japan) and Yukinori Aburatani (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a technique capable of preventing a constituent contained in an aluminum alloy from being vaporized and scattered when the aluminum alloy is used in a process vessel which is heated to a high temperature. According to one aspect thereof, there is provided a technique including a process chamber; a substrate su...