US Patent Issued to Kokusai Electric on Oct. 21 for "Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Oct. 28 -- United States Patent no. 12,451,360, issued on Oct. 21, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Arito Ogawa (Toyama, Japan) and Atsuro Seino (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a method of manufacturing a semiconductor device, including forming a metal nitride film substantially not containing a silicon atom on a substrate by sequentially repeating: (a) supplying a metal-containing gas and a reducing gas, which contains silicon and hydrogen and does not contain a halogen, to the substrate in a process chamber by se...