US Patent Issued to KOKUSAI ELECTRIC on Nov. 11 for "Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,469,713, issued on Nov. 11, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Arito Ogawa (Toyama, Japan) and Shogo Hayasaka (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes etching a crystalline film formed on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (1) supplying a boron-containing gas to the crystalline film; and (2) supplying a halide gas to the crystalline film."

The patent was filed on March 19, 2021, ...