US Patent Issued to KOKUSAI ELECTRIC on Nov. 11 for "Furnace opening structure, substrate processing apparatus and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Nov. 11 -- United States Patent no. 12,467,689, issued on Nov. 11, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Furnace opening structure, substrate processing apparatus and method of manufacturing semiconductor device" was invented by Shinya Morita (Toyama, Japan), Seiyo Nakashima (Toyama, Japan), Yoshitaka Abe (Toyama, Japan), Kazuhiro Harada (Toyama, Japan), Yasunobu Koshi (Toyama, Japan) and Shingo Nohara (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique capable of capable of preventing a substrate from being metal-contaminated by a component constituting a furnace opening. According to one aspect thereof, there is provided a furnace opening ...