ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,485, issued on March 11, was assigned to Kokusai Electric Corp. (Tokyo).
"Substrate processing apparatus, method of manufacturing semiconductor device, and recording medium" was invented by Takeshi Yasui (Toyama, Japan), Katsunori Funaki (Toyama, Japan), Masaki Murobayashi (Toyama, Japan) and Koichiro Harada (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a plasma vessel in which a process gas is plasma-excited; a substrate process chamber which is in communication with the plasma vessel; a gas supply system supplying the process gas; and a coil installed to wind around an outer periphery of the plasma vessel and sup...