US Patent Issued to KOKUSAI ELECTRIC on March 11 for "Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., March 12 -- United States Patent no. 12,249,503, issued on March 11, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Kiyohisa Ishibashi (Toyama, Japan) and Tsukasa Kamakura (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: forming a first film to have a first predetermined film thickness over a substrate by performing a first cycle a first predetermined number of times, the first cycle including non-simultaneously performing: (a1) forming an oxynitride film by supplying a first film-forming gas to the substrate; and (a2)...