US Patent Issued to KOKUSAI ELECTRIC on June 17 for "Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., June 19 -- United States Patent no. 12,334,336, issued on June 17, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" was invented by Yoshitomo Hashimoto (Toyama, Japan) and Katsuyoshi Harada (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes forming a film in a concave portion provided on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including: (a) forming an adsorption inhibition layer by supplying an adsorption inhibitor, which inhibits adsorption of a precursor, to ...