ALEXANDRIA, Va., July 30 -- United States Patent no. 12,374,527, issued on July 29, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing apparatus and method of manufacturing semiconductor device" was invented by Takeshi Yasui (Toyama, Japan), Katsunori Funaki (Toyama, Japan), Yasutoshi Tsubota (Toyama, Japan) and Koichiro Harada (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "Described herein is a technique capable of suppressing sputtering on an inner peripheral surface of a process vessel when a process gas is plasma-excited in the process vessel. According to one aspect thereof, a substrate processing apparatus includes: a process vessel accommodating a process chamber wher...