US Patent Issued to KOKUSAI ELECTRIC on July 22 for "Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., July 23 -- United States Patent no. 12,365,987, issued on July 22, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Hiroaki Hiramatsu (Toyama, Japan) and Shinya Ebata (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A method includes forming a film on a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneously performing: (a) forming a first layer by supplying a precursor to the substrate; and (b) forming a second layer by supplying a reactant to the substrate and modifying the first laye...