US Patent Issued to Kokusai Electric on Jan. 13 for "Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" (Japanese Inventors)

ALEXANDRIA, Va., Jan. 13 -- United States Patent no. 12,525,450, issued on Jan. 13, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of processing substrate, method of manufacturing semiconductor device, substrate processing apparatus, and recording medium" was invented by Ryuji Yamamoto (Tokyo), Kimihiko Nakatani (Toyama, Japan), Yoshitomo Hashimoto (Toyama, Japan), Takayuki Waseda (Toyama, Japan) and Motomu Degai (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: supplying a film formation inhibition gas to the substrate, which includes a first base and a second base on a surface of the substrate, to form a film formation inhibition layer on a ...