US Patent Issued to KOKUSAI ELECTRIC on Feb. 3 for "Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and method of processing substrate" (Japanese Inventor)

ALEXANDRIA, Va., Feb. 3 -- United States Patent no. 12,540,392, issued on Feb. 3, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing apparatus, recording medium, and method of processing substrate" was invented by Arito Ogawa (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes (a) supplying a first-element-containing gas to the substrate; (b) supplying a first reducing gas to the substrate; (c) supplying a second reducing gas, which is different from the first reducing gas, to the substrate; (d) supplying a third reducing gas, which is different from both the first reducing gas and the secon...