ALEXANDRIA, Va., Feb. 11 -- United States Patent no. 12,546,002, issued on Feb. 10, was assigned to Kokusai Electric Corp. (Tokyo).

"Reaction tube, substrate processing apparatus and method of manufacturing semiconductor device" was invented by Kenta Kasamatsu (Toyama, Japan), Atsushi Hirano (Toyama, Japan), Tetsuo Yamamoto (Toyama, Japan) and Takafumi Sasaki (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique capable of uniformizing a flow of a gas discharged from a discharger by reducing a pressure difference in a substrate arrangement region of a process chamber. According to one aspect of the technique, there is provided a reaction tube in which a process chamber i...