US Patent Issued to KOKUSAI ELECTRIC on Dec. 9 for "Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and plasma generation device preliminary" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,492,476, issued on Dec. 9, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Substrate processing apparatus, method of processing substrate, method of manufacturing semiconductor device, and plasma generation device preliminary" was invented by Tsuyoshi Takeda (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: high-frequency power sources supplying power to plasma generators; and matchers installed between the high-frequency power sources and the plasma generators and matching load impedances of the plasma generators with output impedances of the high-frequency power sources, wherein at least one of ...