US Patent Issued to Kokusai Electric on Dec. 9 for "Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" (Japanese Inventor)

ALEXANDRIA, Va., Dec. 9 -- United States Patent no. 12,494,364, issued on Dec. 9, was assigned to Kokusai Electric Corp. (Tokyo).

"Method of manufacturing semiconductor device, substrate processing method, substrate processing apparatus, and recording medium" was invented by Kimihiko Nakatani (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: (a) supplying a silicon- and ligand-containing gas to a substrate having a surface on a first base and second base are exposed to adsorb silicon contained in the silicon- and ligand-containing gas on a surface of one of the first and second base; (b) supplying a fluorine-containing gas to the substrate after the si...