ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,503,768, issued on Dec. 23, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Substrate processing apparatus, method of manufacturing semiconductor device, method of processing substrate, and gas injector" was invented by Toru Kagaya (Toyama, Japan), Yoshimasa Nagatomi (Toyama, Japan) and Madoka Tanaka (Tokyo).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes a process container where a plurality of substrates to be processed is arranged in an inside of the process container; and a gas injector including a pipe extending along a direction in which the plurality of substrates is arranged, and configured to supply a ...