US Patent Issued to Kokusai Electric on Dec. 23 for "Substrate processing apparatus, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 23 -- United States Patent no. 12,505,989, issued on Dec. 23, was assigned to Kokusai Electric Corp. (Tokyo).

"Substrate processing apparatus, and method of manufacturing semiconductor device" was invented by Hidehiro Yanai (Toyama, Japan), Shin Hiyama (Toyama, Japan), Toru Kakuda (Toyama, Japan), Toshiya Shimada (Toyama, Japan) and Tomihiro Amano (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "A conventional substrate processing apparatus for generating plasma cannot generate plasma with high density and thus throughput of substrate processing is low. In order to solve this problem, provided is a substrate processing apparatus including a reaction vessel; a gas introducti...