US Patent Issued to KOKUSAI ELECTRIC on Dec. 2 for "Substrate processing apparatus, plasma generating apparatus, and method of manufacturing semiconductor device" (Japanese Inventors)

ALEXANDRIA, Va., Dec. 2 -- United States Patent no. 12,488,962, issued on Dec. 2, was assigned to KOKUSAI ELECTRIC Corp. (Tokyo).

"Substrate processing apparatus, plasma generating apparatus, and method of manufacturing semiconductor device" was invented by Daisuke Hara (Toyama, Japan), Tatsuya Nishino (Toyama, Japan) and Tsuyoshi Takeda (Toyama, Japan).

According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: a process chamber in which a substrate is processed; a plurality of first electrodes; a plurality of second electrodes; a high-frequency power supply configured to supply a high-frequency power; a high-frequency power application plate configured to connect the pluralit...