ALEXANDRIA, Va., Aug. 6 -- United States Patent no. 12,381,091, issued on Aug. 5, was assigned to Kokusai Electric Corp. (Tokyo).
"Method of processing substrate, method of manufacturing semiconductor device, recording medium, and substrate processing apparatus" was invented by Kimihiko Nakatani (Toyama, Japan), Ryota Ueno (Toyama, Japan), Motomu Degai (Toyama, Japan), Takashi Nakagawa (Toyama, Japan), Yoshitomo Hashimoto (Toyama, Japan) and Yoshiro Hirose (Toyama, Japan).
According to the abstract* released by the U.S. Patent & Trademark Office: "There is provided a technique that includes: etching a first film exposed on a surface of a substrate by performing a cycle a predetermined number of times, the cycle including non-simultaneousl...